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Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
- 1.0375018 - FZÚ 2012 RIV US eng J - Journal Article
Descoeudres, A. - Barraud, L. - De Wolf, S. - Strahm, B. - Lachenal, D. - Guérin, C. - Holman, Z.C. - Zicarelli, F. - Demaurex, B. - Seif, J. - Holovský, Jakub - Ballif, C.
Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment.
Applied Physics Letters. Roč. 99, č. 12 (2011), 123506/1-123506/3. ISSN 0003-6951. E-ISSN 1077-3118
Institutional research plan: CEZ:AV0Z10100521
Keywords : hererojunction * solar cells * hydrogen plasma
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.844, year: 2011
http://apl.aip.org/resource/1/applab/v99/i12/p123506_s1
Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvement in passivation when H2 plasma treatments are used during film deposition. Although the bulk of the a-Si:H layers is slightly more disordered after H2 treatment, the hydrogenation of the wafer/film interface is nevertheless improved with as-deposited layers. Employing H2 treatments, 4 cm2 heterojunction solar cells were produced with industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21%.
Permanent Link: http://hdl.handle.net/11104/0207795
Number of the records: 1