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Determination of single microcrystalline silicon grains preferential crystallographic orientation by polarized Raman spectroscopy
- 1.0373735 - FZÚ 2012 RIV US eng C - Conference Paper (international conference)
Ledinský, Martin - Vetushka, Aliaksi - Stuchlík, Jiří - Fejfar, Antonín - Kočka, Jan
Determination of single microcrystalline silicon grains preferential crystallographic orientation by polarized Raman spectroscopy.
XXII International Conference on Raman Spectroscopy. Melville: AIP, 2010 - (Champion, P.; Ziegler, L.), s. 1109-1110. AIP Conference Proceedings, 1267. ISBN 978-0-7354-0818-0.
[International Conference on Raman Spectroscopy /22./. Boston (US), 08.08.2010-13.08.2010]
R&D Projects: GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510
EU Projects: European Commission(XE) 240826 - PolySiMode
Institutional research plan: CEZ:AV0Z10100521
Keywords : Raman * microcrystalline silicon * atomic force microscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Thin films of microcrystalline silicon (μc-Si:H) are intensively studied mainly for thin film solar cells. All structural and material properties of μc-Si:H significantly depend on the crystalline volume fraction and the crystallographic orientation of the grains.
Permanent Link: http://hdl.handle.net/11104/0206807
Number of the records: 1