Number of the records: 1
Electro- and photoluminescence of InAs/GaAs quantum dot structures
- 1.0372948 - FZÚ 2012 GB eng A - Abstract
Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří - Vyskočil, Jan
Electro- and photoluminescence of InAs/GaAs quantum dot structures.
Quantum Dot 2010. Abstracts book. London: IOP, 2010. s. 395. ISBN N.
[Quantum Dot 2010. 26.04.2010-30.04.2010, Nottingham]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : electroluminescence * photoluminescence * InAs/GaAs * QD
Subject RIV: BM - Solid Matter Physics ; Magnetism
We study the effect of composition and thickness of the low-temperature grown QD capping layer on electroluminescence and photoluminescence from self assembled InAs quantum dots grown by MOVPE.
Permanent Link: http://hdl.handle.net/11104/0206142
Number of the records: 1