Mid-infrared light emitting diodes and high-speed photodiodes based on type II heterostructures with deep AlSb/InAsSb/AlSb quantum wells in an active region

0372415 - FZÚ 2012 DE eng C - Conference Paper (international conference)
Grym, Jan - Nohavica, Dušan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří
Mid-infrared light emitting diodes and high-speed photodiodes based on type II heterostructures with deep AlSb/InAsSb/AlSb quantum wells in an active region.
Compound Semiconductor Week. 38th International Symposium on Compound Semiconductors - ISCS 2011. Berlin: N, 2011, s. 62-63. ISBN N.
[International Symposium on Compound Semiconductors/38./ - ISCS-2011. Berlin (DE), 22.05.2011-26.05.2011]
R&D Projects: GA ČR GAP108/10/0253
Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100521
Keywords : porous structures * epitaxial growth * nanopores
Subject RIV: BM - Solid Matter Physics ; Magnetism

Significant development in defect density reduction in semiconductor materials was achieved using epitaxial lateral overgrowth techniques. Recently, semiconductor epitaxial growth has progressed to pseudomorphic, lattice mismatched systems where a small amount of strain is accommodated in very thin layers. We report on the preparation of nanopores in III-V semiconductors, their modification by the heat treatment and epitaxial overgrowth. Current-line oriented (CLO) and crystallographically oriented (CO) pores with different sizes, densitites, and morphologies were electrochemically etched at on the substrate surface of InP and GaAs. The porous structures before and after the epitaxial growth were observed by SEM and AFM. The composition of the grown layers was determined by the electron microprobe with wavelength-dispersive spectrometer and correlated with the results of low temperature photoluminescence spectroscopy.
Permanent Link: http://hdl.handle.net/11104/0205738