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In situ reflectance anisotropy spectroscopy monitoring of formation and capping process of InAs/GaAs quantum dots
- 1.0371546 - FZÚ 2012 DE eng C - Conference Paper (international conference)
Hospodková, Alice - Vyskočil, Jan - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard - Kuldová, Karla
In situ reflectance anisotropy spectroscopy monitoring of formation and capping process of InAs/GaAs quantum dots.
EWMOVPE 2009. Ulm: DOW Electronic Materials, 2009, s. 261-264.
[European Workshop on Metalorganic Vapor Phase Epitaxy /13./. ULM (DE), 07.06.2009-10.06.2009]
R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : RAS * MOVPE * QD * InAs/GaAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
The time resolved Reflectance Anisotropy Spectroscopy (RAS) measurement at 4.2 eV was used for the optimisation of technological parameters and study of Stranski-Krastanow QD formation.
Permanent Link: http://hdl.handle.net/11104/0205038
Number of the records: 1