Number of the records: 1
Comparison of InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
- 1.0371545 - FZÚ 2012 DE eng C - Conference Paper (international conference)
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Vyskočil, Jan - Hulicius, Eduard - Kuldová, Karla
Comparison of InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
EWMOVPE 2009. Ulm: DOW Electronic Materials, 2009, s. 179-181.
[European Workshop on Metalorganic Vapor Phase Epitaxy /13./. ULM (DE), 07.06.2009-10.06.2009]
R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : MOVPE * quantum dots * InAs/GaAs * InGaAs * GaAsSb
Subject RIV: BM - Solid Matter Physics ; Magnetism
We compare properties of InAs/GaAs quantum dots (QDs) covered by InGaAs or GaAsSb strain reducing layers (SRLs) prepared by MOVPE.
Permanent Link: http://hdl.handle.net/11104/0205037
Number of the records: 1