0370779 - FZÚ 2012 RIV CH eng J - Journal Article
Huguenin-Love, J.L. - Lauer, N.T. - Soukup, R. J. - Ianno, N.J. - Kment, Štěpán - Hubička, Zdeněk
The deposition of 3C-SiC thin films onto the (111) and (110) faces of Si using pulsed sputtering of a hollow cathode.
Materials Science Forum. 645-648, 1-2 (2010), s. 131-134. ISSN 0255-5476.
[International Conference on Silicon Carbide and Related Materials Location /13./. Nurnberg, 11.10.2009-16.10.2009]
Institutional research plan: CEZ:AV0Z10100522
Keywords : sputtering * pulse * germanium * 3C
Subject RIV: BM - Solid Matter Physics ; Magnetism
DOI: https://doi.org/10.4028/www.scientific.net/MSF.645-648.131

Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.

Permanent Link: http://hdl.handle.net/11104/0204474