Backscattered electrons in the SEM imaging

0367235 - ÚPT 2012 IT eng C - Conference Paper (international conference)
Frank, Luděk - Pokorná, Zuzana - Mikmeková, Šárka - Müllerová, Ilona
Backscattered electrons in the SEM imaging.
Proceedings of the 10th Multinational Congress on Microscopy 2011. Urbino: SISM, 2011, s. 65-66.
[Multinational Congress on Microscopy 2011 /10./ - MCM 2011. Urbino (IT), 04.09.2011-09.09.2011]
R&D Projects: GA ČR GAP108/11/2270
Institutional research plan: CEZ:AV0Z20650511
Keywords : SEM * BSE * low energy * grain contrast
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Backscattered electrons (BSE) are traditionally employed as a source of the material contrast showing the average atomic number of a target under observation in the SEM. Most often they are detected with a ring shaped detector situated below the objective lens (OL), concentrically with the optical axis. Modern devices implement the through-the-lens principle with BSE passing to above OL where they impinge on a converter plate and release secondary electrons (SE), which are collected with a side-attached detector of the Everhart-Thornley type.
Permanent Link: http://hdl.handle.net/11104/0201981