Mapping of dopants in silicon by injection of electrons

0367163 - ÚPT 2012 CZ eng K - Conference Paper (Czech conference)
Hovorka, Miloš - Konvalina, Ivo - Frank, Luděk
Mapping of dopants in silicon by injection of electrons.
Mikroskopie 2011. Nové Město na Moravě: Československá mikroskopická společnost, 2011 - (Frank, L.; Hozák, P.), s. 46. ISBN N.
[Mikroskopie 2011. Nové Město na Moravě (CZ), 17.02.2011-18.02.2011]
Institutional research plan: CEZ:AV0Z20650511
Keywords : mapping dopants * semiconductors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

We have focused on planar p-type structures of various dopant densities, embedded In an n-type substrate. The samples were observed in UHV electron microscope with the cathode lens. Imaging by means of secondary electrons and its quantifiability was verified and the method was extended to very low energies.
Permanent Link: http://hdl.handle.net/11104/0006670