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Influence of capping layer growth parameters on the properties of MOVPE grown InAs/GaAs quantum dots
- 1.0367077 - FZÚ 2012 FR eng C - Conference Paper (international conference)
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard - Kuldová, Karla - Vyskočil, Jan - Melichar, Karel - Šimeček, Tomislav
Influence of capping layer growth parameters on the properties of MOVPE grown InAs/GaAs quantum dots.
IC-MOVPE XIV. Metz: UMI2958 GT-CNRS, 2008, s. 101-102.
[International Metal Organic Vapor Phase Epitaxy Conference /14./. Metz (FR), 01.06.2008-06.06.2008]
R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/06/0718
Institutional research plan: CEZ:AV0Z10100521
Keywords : InAs/GaAs * quantum dots * MOVPE * RAS
Subject RIV: BM - Solid Matter Physics ; Magnetism
In this work we study the influence of capping process and its technology on the photoluminescence properties of quantum dots.
Permanent Link: http://hdl.handle.net/11104/0201862
Number of the records: 1