Number of the records: 1
Optical gain of the 1.54 μm emission in MBE-grown Si:Er nanolayers
- 1.0357219 - FZÚ 2011 RIV US eng J - Journal Article
Ha, N.N. - Dohnalová, Kateřina - Gregorkiewicz, T. - Valenta, J.
Optical gain of the 1.54 μm emission in MBE-grown Si:Er nanolayers.
Physical Review. B. Roč. 81, č. 19 (2010), 195206/1-195206/6. ISSN 1098-0121
Institutional research plan: CEZ:AV0Z10100521
Keywords : optical parametric oscillators * nonlinear waveguides * laser materials * nonlinear optical crystals
Subject RIV: BH - Optics, Masers, Lasers
Impact factor: 3.772, year: 2010
We present investigations of the optical gain cross section of 1.54 μm Er-related emission at 4.2 K in Si/Si:Er molecular-beam-epitaxy-grown multinanolayers. This ultranarrow (full width at half maximum below 8 μeV) emission originating from the unique Er-related optical complex, Er-1 center, ensures the best condition to achieve stimulated emission.
Permanent Link: http://hdl.handle.net/11104/0195542
Number of the records: 1