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Metal nanoparticle films deposited by electrophoresis on semiconductor III-V-N compounds
- 1.0356273 - ÚFE 2011 FR eng C - Conference Paper (international conference)
Žďánský, Karel - Yatskiv, Roman - Zavadil, Jiří - Kostka, František - Grym, Jan - Nohavica, Dušan - Vaniš, Jan - Lorinčík, Jan
Metal nanoparticle films deposited by electrophoresis on semiconductor III-V-N compounds.
E-MRS 2010, Spring Meeting. Strasbourg: E-MRS Headquarters, 2010, G2-G7.
[E-MRS Spring Meeting. STRASBOURG (FR), 07.06.2010-11.06.2010]
R&D Projects: GA MŠMT(CZ) OC10021; GA AV ČR(CZ) KAN401220801
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor devices * nanostructures * sensors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Study of metal nanoparticle films deposited on dilute nitride-InP layers from colloid solutions is reported. Preparation of dilute nitride-InP was endeavoured by LPE growing of InP with admixture of InN and by N implantation to InP. Colloid solutions were prepared from water solutions of metal compounds and hydrazine. Samples with deposited Pd or Ag nanoparticles were characterised by AFM, SEM, SIMS, reflection, PL and Raman spectroscopy. Samples were sensitive to hydrogen in the case of Pd nanoparticles.
Permanent Link: http://hdl.handle.net/11104/0194837
Number of the records: 1