Number of the records: 1
Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor
- 1.0354206 - FZÚ 2011 RIV US eng J - Journal Article
Ciccarelli, C. - Park, B.G. - Ogawa, S. - Ferguson, A.J. - Wunderlich, Joerg
Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor.
Applied Physics Letters. Roč. 97, č. 8 (2010), 082106/1-082106/3. ISSN 0003-6951. E-ISSN 1077-3118
Institutional research plan: CEZ:AV0Z10100521
Keywords : MOSFET
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.820, year: 2010
We present a study of the magnetoresistance (MR) of a Si metal-oxide-semiconductor field-effect-transistor (MOSFET) at the break-down regime when a magnetic field is applied perpendicular to the plane of the device.
Permanent Link: http://hdl.handle.net/11104/0193257
Number of the records: 1