Evaluation of defect concentration in doped SWCNT

0353077 - ÚFCH JH 2011 RIV DE eng J - Journal Article
Kalbáč, Martin - Kavan, Ladislav
Evaluation of defect concentration in doped SWCNT.
Physica Status Solidi B. Roč. 247, 11-12 (2010), s. 2797-2800. ISSN 0370-1972. E-ISSN 1521-3951
R&D Projects: GA ČR GC203/07/J067; GA ČR GAP204/10/1677; GA AV ČR IAA400400911; GA AV ČR IAA400400804; GA AV ČR KAN200100801; GA MŠMT LC510; GA MŠMT ME09060
Institutional research plan: CEZ:AV0Z40400503
Keywords : defects * Raman spectroscopy * spectroelectrochemistry
Subject RIV: CG - Electrochemistry
Impact factor: 1.344, year: 2010

In the present study we analyze and discus Raman spectra of doped SWCNTs. We focus on the development of the integral area of the D mode (AD), the TG mode (ATG) and the G′ mode (AG′). It is shown that area of the D band is significantly attenuated in doped carbon nanotubes samples for both semiconducting and metallic tubes. A similar dependence on the doping as in the case of the area of the D mode was found also for the area of the TG and the G′ mode. The area of the G′ mode was found to be more significantly dependent on the electrode potential than the area of the TG mode. However, this difference is only small, hence the AD/AG′ and AD/ATG ratios give only slightly different results in evaluation of the amount of defects in doped SWCNT samples.
Permanent Link: http://hdl.handle.net/11104/0192421