Number of the records: 1
Semiconductor Technologies
- 1.0350480 - ÚFE 2011 HR eng M - Monography Chapter
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Role of rare-earth elements in the technology of III-V semiconductors prepared by liquid phase epitaxy.
Semiconductor Technologies. 1. Vukovar: InTech, 2010 - (Grym, J.), s. 295-320. ISBN 978-953-307-080-3
R&D Projects: GA ČR(CZ) GP102/08/P617; GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth elements * III-V semiconductors
Subject RIV: JJ - Other Materials
Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III–V semiconductors due to REs high affinity toward shallow impurities. We present a unique study of the impact of REs (Tb, Dy, Pr, Tm, Er, Gd, Nd, Lu, Yb, Ce) and their oxides (PrOx, TbOx, Tm2O3, Gd2O3, Eu2O3) on the properties of InP layers and show the application of REs in the device technology: radiation detectors and light emitting diodes based on InGaAsP/InP double heterostructure.
Permanent Link: http://hdl.handle.net/11104/0190478
Number of the records: 1