Number of the records: 1
Growth of InP crystals for radiation detectors and other application
- 1.0346109 - ÚFE 2011 CZ eng K - Conference Paper (Czech conference)
Pekárek, Ladislav - Yatskiv, Roman
Growth of InP crystals for radiation detectors and other application.
Proceedings of the 18th Joint seminar Development of materials science in research and education. Praha: Czechoslovak association for crystal growth, 2008 - (Nitsch, K.; Rodová, M.), s. 74-75. ISBN 978-80-254-0864-3.
[Development of Materials Science in Research and Education, Joint Seminar 2008 /18./. Hnanice (CZ), 02.09.2008-05.09.2008]
R&D Projects: GA AV ČR KAN400670651; GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : crystal growth * radiation detector * InP
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Bulk InP single crystals were grown by Czochralski method. Various dopants were added to the melt to obtain single crystals suitable for radiation detectors and other application. The intentionally doped of InP crystals were characterized by measurements of resistivity and Hall coefficient. Prototype detectors were prepared and evaluated by spectral detection of alpha particles and x-rays.
Permanent Link: http://hdl.handle.net/11104/0187217
Number of the records: 1