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LPE growth of InP layers from rare-earth treated melts for the radiation detection structures
- 1.0346035 - ÚFE 2011 PL eng C - Conference Paper (international conference)
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
LPE growth of InP layers from rare-earth treated melts for the radiation detection structures.
EXMATEC 2008. Lodž: IEEE, 2008 - (Ciupa, E.; Sibinski, M.; Podgorski, J.; Bielska, S.), s. 171-172. ISBN 978-83-915220-1-1.
[9TH International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies. Lodž (PL), 01.06.2008-04.06.2008]
R&D Projects: GA ČR(CZ) GP102/08/P617; GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth elements * III-V semiconductors
Subject RIV: JJ - Other Materials
Conventionally prepared bulk and epitaxial InP crystals are of n-type conductivity due to intrinsic donor impurities. Intentional doping with shallow acceptors is a common way to prepare p-type material. InP epitaxial layers grown by LPE from rare-earth treated melts show p-type conductivity due to the efficient gettering of residual donor impurities. We demonstrate the preparation of detection structures exploiting a Schottky contact on a high-purity p-type layer and ohmic contacts on a p-n junction.
Permanent Link: http://hdl.handle.net/11104/0187164
Number of the records: 1