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Role of rare-earth elements in the design of radiation detectors and electroluminescent sources
- 1.0346031 - ÚFE 2011 RIV US eng C - Conference Paper (international conference)
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Role of rare-earth elements in the design of radiation detectors and electroluminescent sources.
ASDAM 2008. Piscataway, N.J: IEEE Operation Center, 2008 - (Haščík, Š.; Osvald, J.), s. 107-110. ISBN 978-1-4244-2325-5.
[The Seventh International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice (SK), 12.10.2008-16.10.2008]
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth elements * III-V semiconductors
Subject RIV: JJ - Other Materials
Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to RE’s high affinity towards shallow impurities. We demonstrate this purifying effect on the preparation of InP-based structures by liquid phase epitaxy with Pr admixture to the growth melt. We discuss the application of p-type InP layers in radiation detectors and InGaAsP layers in electroluminescent sources.
Permanent Link: http://hdl.handle.net/11104/0187162
Number of the records: 1