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Growth and characterization of GaN:Mn layers by MOVPE
- 1.0340727 - FZÚ 2010 RIV NL eng J - Journal Article
Sofer, Z. - Sedmidubský, D. - Stejskal, J. - Hejtmánek, Jiří - Maryško, Miroslav - Jurek, Karel - Václavů, M. - Havránek, Vladimír - Macková, Anna
Growth and characterization of GaN:Mn layers by MOVPE.
Journal of Crystal Growth. Roč. 310, č. 23 (2008), s. 5025-5027. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GA104/06/0642
Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505
Keywords : metalorganic vapor-phase epitaxy * nitrides * magnetic materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.757, year: 2008
We present a growth of Ga1_xMnxN layers by metalorganic vapor phase epitaxy (MOVPE). The analysis of the MOVPE deposition process of Ga1_xMnxN thin films revealed an unfavorable ratio between the apparent concentration of Mn in the gas phase and its doping level in the deposited layer. On the other hand, the incorporation of Mn has a positive effect on the resulting surface morphology. The optimal deposition temperature of 1000 1C was found out as a compromise between the layer quality and Mn concentration. We observed a ferromagnetic component persisting up to room temperature and a prevailing paramagnetic phase.
Permanent Link: http://hdl.handle.net/11104/0183913
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