Number of the records: 1
Scanning low energy electron microscopy of doped silicon at units of eV
- 1.0335882 - ÚPT 2011 IT eng A - Abstract
Hovorka, Miloš - Mikmeková, Šárka - Frank, Luděk
Scanning low energy electron microscopy of doped silicon at units of eV.
6th International Workshop on LEEM/PEEM. Trieste: ELETTRA, 2008. s. 110. ISBN N.
[International Workshop on LEEM/PEEM /6./. 07.09.2008-11.09.2008, Trieste]
R&D Projects: GA AV ČR IAA100650803
Institutional research plan: CEZ:AV0Z20650511
Keywords : very low energy electron microscopy * scanning low energy electron microscope
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Very low energy electron microscopy with the primary beam of hundreds of eV has proven very useful when imaging doped areas in semiconductors at high lateral resolution and high sensitivity to the dopant concentration. We employed the scanning low energy electron microscope equipped with the cathode lens in imaging of doped silicon samples at the landing energy of few eV.
Permanent Link: http://hdl.handle.net/11104/0180232
Number of the records: 1