Growth and characterization of GaN:Mn layers by MOVPE

0322599 - ÚJF 2009 RIV NL eng J - Journal Article
Sofer, Z. - Sedmidubský, D. - Stejskal, J. - Hejtmánek, J. - Marygsko, M. - Jurek, K. - Václavů, M. - Havránek, Vladimír - Macková, Anna
Growth and characterization of GaN:Mn layers by MOVPE.
[Růst a charakterizace vrstev GaN:Mn pomocí MOVPE.]
Journal of Crystal Growth. Roč. 310, č. 23 (2008), s. 5025-5027. ISSN 0022-0248. E-ISSN 1873-5002.
[14th International Conference on Metal Organic Vapor Phase Epitaxy. Metz, 01.06.2008-06.06.2008]
Institutional research plan: CEZ:AV0Z10480505
Keywords : Metalorganic vapor-phase epitaxy * Nitrides * Magnetic materials
Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders
Impact factor: 1.757, year: 2008

In this paper we present a growth of Ga1-xMnxN layers by metalorganic vapor-phase epitaxy (MOVPE). The analysis of the MOVPE deposition process of Ga1-xMnxN thin films revealed an unfavorable ratio between the apparent concentration of Mn in the gas phase and its doping level in the deposited layer. On the other hand, the incorporation of Mn has a positive effect on the resulting surface morphology. The optimal deposition temperature of 1000 degrees C was found out as a compromise between the layer quality and Mn concentration. We observed a ferromagnetic component persisting up to room temperature and a prevailing paramagnetic phase.

Presentujeme růst vrstev Ga1-xMnxN metalorganickou párově fázovou epitaxí(metalorganic vapor-phase epitaxy - MOVPE).
Permanent Link: http://hdl.handle.net/11104/0170802