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Tip-induced reduction of the resonant tunneling current on semiconductor surfaces
- 1.0315275 - FZÚ 2009 RIV US eng J - Journal Article
Jelínek, Pavel - Švec, Martin - Pou, P. - Perez, R. - Cháb, Vladimír
Tip-induced reduction of the resonant tunneling current on semiconductor surfaces.
[Hrotem vyvolaný pokles rezonančního tunelovacího proudu na površích polovodičů.]
Physical Review Letters. Roč. 101, č. 17 (2008), 176101/1-176101/4. ISSN 0031-9007. E-ISSN 1079-7114
R&D Projects: GA AV ČR KAN400100701; GA AV ČR IAA1010413; GA AV ČR IAA100100616
Institutional research plan: CEZ:AV0Z10100521
Keywords : scaning tunneling microscopy * electron states at surfaces and interfaces * nanoscale contacts
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 7.180, year: 2008
We report scanning tunneling microscope measurements showing a substantial decrease of the current almost to zero, on the Si(111) -(7x7) reconstruction in the near-to-contact region under low bias conditions.
Měřením skanovacím tunelovacím mikroskopem na povrchu Si(111)-(7x7) ukazujeme výrazný pokles tunelovacího proudu v oblasti blízko kontaktu a při nízkém napětí.
Permanent Link: http://hdl.handle.net/11104/0165525
Number of the records: 1