Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

0314836 - FZÚ 2009 RIV DE eng J - Journal Article
Giddings, A.D. - Makarovsky, O. N. - Khalid, M.N. - Yasin, S. - Edmonds, K. W. - Campion, R. P. - Wunderlich, J. - Jungwirth, Tomáš - Williams, D.A. - Gallagher, B. L. - Foxon, C. T.
Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions.
[Silná tunelovací anisotropní magnetorezistance v (Ga,Mn)As nano-konstrikcích.]
New Journal of Physics. Roč. 10, č. 8 (2008), 085004/1-085004/9. ISSN 1367-2630. E-ISSN 1367-2630
R&D Projects: GA ČR GEFON/06/E002; GA MŠMT LC510; GA ČR GA202/05/0575; GA ČR GA202/04/1519
EU Projects: European Commission(XE) 015728 - NANOSPIN
Institutional research plan: CEZ:AV0Z10100521
Keywords : ferromagnetic semiconductor * nanoconstriction * tunneling anisotropic magnetoresistance,
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.440, year: 2008

We report here large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstrictions of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theories for enhanced AMR ferromagnetic semiconductor nanoscale devices, particularly with regard to the dependence on the magnetotransport of the bulk material. We conclude that our results are most consistent with the Coulomb blockade AMR mechanism.

Silná tunelovací anisotropní magnetorezistance v (Ga,Mn)As nano-konstrikcích je studována experimenálně a diskutována teoreticky
Permanent Link: http://hdl.handle.net/11104/0165220