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On the magnetic properties of Gd implanted GaN
- 1.0313793 - ÚJF 2009 RIV US eng J - Journal Article
Hejtmánek, J. - Knížek, K. - Maryško, M. - Jirák, Z. - Sedmidubský, D. - Sofer, Z. - Peřina, Vratislav - Hardtdegen, H. - Buchal, C.
On the magnetic properties of Gd implanted GaN.
[O magnetických vlastnostech Gd implantovaného GaN.]
Journal of Applied Physics. Roč. 103, č. 7 (2008), 07D107/1-07D107/3. ISSN 0021-8979. E-ISSN 1089-7550
Institutional research plan: CEZ:AV0Z10480505
Keywords : GaN * Curie-type * FM
Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders
Impact factor: 2.201, year: 2008
The wurzite type gallium nitride doped by gadolinium, Ga1-xGdxN (x similar to 0.01-0.07), was prepared by Gd ion implantation of the parent GaN thin films deposited on sapphire substrates. The material obtained exhibits a weak ferromagnetism (FM) persisting up to 700 K. At higher Gd concentrations, the minute FM component coexists with much more pronounced Curie-type paramagnetism. In a dilute limit (x <= 0.01), the latter part is substantially reduced and the saturated FM moment reaches the value M similar to 2 mu(B)/Gd atom.
Wurzitický typ nitridu galia dopovaný gadoliniem, Ga1-xGdxN (x v oboru 0.01-0.07), byl připraven ioty Gd implantovanými na mateřskou tenkou vrstvu deponovanou na safírovém substrátu. Získaný materiál vykazuje slabý feromegnetismus až do 700 K.
Permanent Link: http://hdl.handle.net/11104/0164505
Number of the records: 1