Growth and properties of InAs/In.sub.x./sub.Ga.sub.1-x./sub.As/GaAs quantum dot structures

0308047 - FZÚ 2008 RIV NL eng J - Journal Article
Hulicius, Eduard - Oswald, Jiří - Pangrác, Jiří - Vyskočil, Jan - Hospodková, Alice - Kuldová, Karla - Melichar, Karel - Šimeček, Tomislav
Growth and properties of InAs/In_xGa_1-xAs/GaAs quantum dot structures.
[Růst a vlastnosti InAs/In_xGa_1-xAs/GaAs struktur s kvantovými tečkami.]
Journal of Crystal Growth. Roč. 310, 7-9 (2008), s. 2229-2233. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA AV ČR KJB101630601; GA AV ČR IAA100100719; GA ČR GA202/06/0718; GA ČR GA202/05/0242
Institutional research plan: CEZ:AV0Z10100521
Keywords : nanostructures * metalorganic vapor-phase epitaxy * semiconducting III–V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.757, year: 2008

Single- and double-layer InAs/GaAs quantum dot structures with strain-reducing layers (SRLs) were prepared by metalorganic vaporphase epitaxy using the Stranski–Krastanow growth mode. Structures were studied in-situ by reflectance anisotropy spectroscopy (RAS), and ex-situ by photoluminescence (PL). These structures, with very intense room temperature PL at wavelengths from 1.25 to 1.55 μm according to growth and structure parameters, were grown along while monitored with RAS. Strong correlation between RAS signal and PL intensity was found. Dependence of PL emission maximum position on SRL composition and capping layer thickness is shown.

Struktury s jednou a dvěma vrstvami InAs/GaAs kvantových teček a vrstvami redukujícími pnutí byly připraveny pomocí MOVPE. Růst těchto struktur, vykazujících velmi intenzivní fotoluminiscenci za pokojové teploty emitované na vlnových délkách od 1.25 do 1.55 μm byl monitorován pomocí RAS.
Permanent Link: http://hdl.handle.net/11104/0160642