Annealing of Bi.sub.2./sub.Te.sub.3./sub. thin films prepared by pulsed laser deposition

0304240 - URE-Y 20030140 RIV CZ eng C - Conference Paper (international conference)
Pavelka, Martin - Zeipl, Radek - Jelínek, Miroslav - Walachová, Jarmila - Studnička, Václav
Annealing of Bi₂Te₃ thin films prepared by pulsed laser deposition.
Brno: Vysoké učení technické, Fakulta strojního inženýrství, 2003. ISBN 80-214-2486-9. In: International Conference NANO'03. Proceedings. - (Šandera, P.), s. 104-108
[NANO'03. Brno (CZ), 21.10.2003-23.10.2003 (K)]
R&D Projects: GA ČR GA202/02/0098; GA AV ČR IAA1010110
Institutional research plan: CEZ:AV0Z2067918
Keywords : thin films * thermoelectricity
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Bi₂Te₃ thin films were prepared by laser ablation /PLD/ at room temperature and then annealed in argon atmosphere. Anneling is a widely used method of film properties /primarily crystallinity/ improvement. The influence of annealing on transport properties was studied.
Permanent Link: http://hdl.handle.net/11104/0114380