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High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements
- 1.0304148 - URE-Y 20030099 RIV DE eng J - Journal Article
Zavadil, Jiří - Žďánský, Karel - Pekárek, Ladislav - Procházková, Olga - Kacerovský, Pavel
High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements.
Physica Status Solidi C. Roč. 0, č. 3 (2003), s. 862-866. ISSN 1610-1634.
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest, 26.05.2002-29.05.2002]
R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4043
Institutional research plan: CEZ:AV0Z2067918
Keywords : semiconductors * photoluminescence * galvanomagnetic effects
Subject RIV: BM - Solid Matter Physics ; Magnetism
Crystals of intentionally undoped n-type InP and Mn doped p-type InP were grown by Czochralski technique. The as grown crystals and those processed by high temperature long time annealing were studied by low temperature photoluminescence and temperature dependent Hall measurements. A new broad band was observed in those undoped InP samples which were converted to semi-insulating state by annealing.
Permanent Link: http://hdl.handle.net/11104/0114289
Number of the records: 1