Bi.sub.2./sub.Te.sub.3./sub. layers prepared by laser ablation

0304147 - URE-Y 20030030 FR eng A - Abstract
Zeipl, Radek - Karamazov, S. - Jelínek, Miroslav - Lošťák, P. - Pavelka, Martin - Winiarz, S. - Czajka, R. - Vaniš, Jan - Šroubek, Filip - Zelinka, Jiří - Walachová, Jarmila
Bi₂Te₃ layers prepared by laser ablation.
Montpellier: Société Internationale de Congres et Services CSI Congres, 2003. ICT 2003. s. 57
[ICT2003 - International Conference on Thermoelectrics /22./. 17.08.2003-21.08.2003, La Grande-Motte]
R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4045; GA ČR GA202/02/0098
Institutional research plan: CEZ:AV0Z2067918
Keywords : thin films * thermoelectricity * bismuth compounds
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Transport properties for 60nm thick layers prepared by the laser ablation from Bi₂Te₃ target and deposited on quartz glass substrates were explored. The energy density of the laser beam on the target was 2Jcm.sup.-2.sup. and temperature of the substrate varied between (20-480 _oC) for different samples. The influence of temperature of substrate during the deposition on topography of layers measured by STM (Scanning Tunnelling Microscope) is presented.
Permanent Link: http://hdl.handle.net/11104/0114288