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Role of liquid phase epitaxy in preparation of semiconductor materials for radiation detectors
- 1.0304080 - URE-Y 20020135 CZ eng A - Abstract
Grym, Jan - Procházková, Olga
Role of liquid phase epitaxy in preparation of semiconductor materials for radiation detectors.
Prague: Czech Technical University, 2002. Poster 2002. Book of Exteded Abstracts. s. PE13.1-PE13.2
[International Student Conference on Electrical Engineering Poster 2002 /6./. 23.05.2002-23.05.2002, Prague]
R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4043; GA MŠMT 300106513
Institutional research plan: CEZ:AV0Z2067918
Keywords : rare earth elements * liquid phase epitaxial growth * III-V semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
InP-based semiconductor materials belong to promising candidates for the application in ionising radiation detectors. To take advantage of the suitable properties of InP, it is necesary to prepare high quality detector structures. LPE technique with rare-earth elements in the growth melt is discussed. Propeties of commonly prepared InP layers and those grown from Tb treated melt are compared.
Permanent Link: http://hdl.handle.net/11104/0114224
Number of the records: 1