High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements

0303985 - URE-Y 20020085 HU eng A - Abstract
Žďánský, Karel - Zavadil, Jiří - Pekárek, Ladislav - Procházková, Olga - Kacerovský, Pavel
High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements.
Budapest: Rese, 2002. Book of Abstracts EXMATEC'2002. s. 82-83
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. 26.05.2002-29.05.2002, Budapest]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074
Institutional research plan: CEZ:AV0Z2067918
Keywords : semiconductor materials * luminescence
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Crystals of intentionally undoped n-type InP and Mn doped p-type InP were grown. As grown crystals and those processed by high temperature annealing were studied by photoluminescence and temperature dependent Hall measurements. A new broad band was observed in those undoped InP samples which were converted to semi-insulating state by annealing. Hall measurements on those samples show that the semi-insulating state is caused by deep level defects of the same energy as the binding energy of the Fe impurity.
Permanent Link: http://hdl.handle.net/11104/0114129