Role of rare earth elements in growth process of InP LPE layers

0303869 - URE-Y 20010050 CZ eng A - Abstract
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Role of rare earth elements in growth process of InP LPE layers.
Prague: Czech Technical University, 2001. Poster 2001. Book of Extended Abstract. s. NS16.1-NS16.2
[International Student Conference on Electrical Engineering /5./. 24.05.2001, Prague]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Institutional research plan: CEZ:AV0Z2067918
Keywords : liquid phase epitaxial growth * rare earth compounds * III-V semiconductors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Rare earth elements (REE) addition to the growth melt during the InP LPE growth process leads to gettering of shallow impurities and is considerably effected by REE concentrations. As a consequence, concentration of shallow donors was decreased by up to three orders of magnitude and PL spectra were markedly narrowed. The dislocation density was reduced by a half order of magnitude. Yb ions were incorporated into the InP host lattice.
Permanent Link: http://hdl.handle.net/11104/0114053