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Temperature dependence of electron hall concetration in n-type InP and n-type In.sub.0.5./sub.Ga.sub.0.5./sub.P

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    0303478 - URE-Y 990162 RIV CN eng C - Conference Paper (international conference)
    Žďánský, Karel - Procházková, Olga - Nohavica, Dušan
    Temperature dependence of electron hall concetration in n-type InP and n-type In0.5Ga0.5P.
    Beijing: [Institute of Semiconductors, Chinese Academy of Sciences], 1999. In: Proceedings The Second Chinese-Czech Symposium Advenced Materials and Devices for Optoelectronics. - (Yu, J.), s. 52-58
    [Chinese-Czech Symposium Advanced Materials and Devices for Optoelectronics /2./. Beijing (CN), 13.09.1999-14.09.1999]
    R&D Projects: GA ČR GA102/99/0341
    Grant - others:AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : III-V semiconductors * Hall effect
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

    Permanent Link: http://hdl.handle.net/11104/0113693

     
     

Number of the records: 1  

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