SLEEM Imaging of Doping Patterns in Semiconductors

0205406 - UPT-D 20010046 RIV IT eng C - Conference Paper (international conference)
Müllerová, Ilona - Frank, Luděk - El Gomati, M. M.
SLEEM Imaging of Doping Patterns in Semiconductors.
Proceedings of 5th Multinational Congress on Electron Microscopy. Lecce: Rinton Press, 2001 - (Dini, L.; Catalano, M.), s. 317-318. ISBN 1-58949-003-7.
[MCEM '01 /5./ - Multinational Congress on Electron Microscopy. Lecce (IT), 20.09.2001-25.09.2001]
R&D Projects: GA AV ČR IAA1065901
Institutional research plan: CEZ:AV0Z2065902
Keywords : UHV SEM * low energy range
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

P + doped patterns in n-type Si were observed in a UHV SEM equipped with the cathode lens, i.e. in the SLEEM mode. In the low energy range below 6 keV, p-type appeared brighter than n-type. The contrast reaches its maximum at 50 to 100 eV, which value fits that of the shortest penetration depth of electrons. This supports explanation based on influence of the internal field connected with the band bending caused by presence of the surface states.
Permanent Link: http://hdl.handle.net/11104/0101020