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Epitaxial rectrystalization of the Ni/MgO(001)interface
- 1.0185815 - UJF-V 20033141 RIV CZ eng K - Konferenční příspěvek (tuzemská konf.)
Vacík, Jiří - Naramoto, H. - Yamamoto, S. - Narumi, K. - Havránek, Vladimír
Epitaxial rectrystalization of the Ni/MgO(001)interface.
Epitaxial rectrystalization of the Ni/MgO(001)interface. Plzeň, 2002, s. 389-391.
[Konference českých a slovenských fyziků /14./. Plzeň (CZ), 09.09.2002-12.09.2002]
Výzkumný záměr: CEZ:AV0Z1048901
Klíčová slova: Ni * MgO * epitaxy
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Process of recrystallization of the epitaxially grown Ni layer deposited on the MgO(001) single crystal is studied. Thin Ni layer prepared by the vapor deposition of Ni on the MgO substrate kept were annealed between 500 and 1000 0C and systematically analyzed by Rutherford backscattering, X-ray diffraction and atomic force microscopy. Dramatic change in evolution of the crystalline quality was observed during the thermal treatment. The strain and defect density gradually decreased and at the temperature 1000 0C the strain-free Ni/MgO(001) interface was obtained.
Trvalý link: http://hdl.handle.net/11104/0082179
Number of the records: 1