Annealing behaviour of boron atoms implanted into polyethylene-terephtalate

0185053 - UJF-V 20000223 RIV NL eng J - Journal Article
Vacík, Jiří - Hnatowicz, Vladimír - Červená, Jarmila - Peřina, Vratislav - Popok, V. - Odzhaev, V. - Švorčík, V. - Rybka, V. - Arenholz, E. - Fink, D.
Annealing behaviour of boron atoms implanted into polyethylene-terephtalate.
Nuclear Instruments & Methods in Physics Research Section B. 166/167, - (2000), s. 637-640. ISSN 0168-583X. E-ISSN 1872-9584
R&D Projects: GA ČR GA203/99/1626; GA ČR GV202/97/K038; GA AV ČR KSK1010601
Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders
Impact factor: 0.955, year: 2000

Hundred keV B.SUP.- ions were implanted at high fluences into polyethyleneterephtalate (PET, Mylar) and the boron depth distributions were measured by the neutron depth profiling technique (NDP). Subsequently the implanted samples were annealed isochronally to determine the diffusional, trapping and detrapping behaviour of the boron atoms. The boron depth profiles of as-implanted samples differ significantly from those predicted by TRIM code. Pronounced inwardand outward profile tails point at increased mobility and redistribution of boron atoms during the implantation. Thermal annealing to the temperatures below 100 .sup.o C doesnot change the total boron content in the 1 ćm thick surface layer and the boron depth profiles as well. For higher annealing temperatures a significant redistribution of boron atoms is observed.
Permanent Link: http://hdl.handle.net/11104/0081475