0134254 - FZU-D 20030150 RIV NL eng J - Journal Article
Toušková, J. - Kindl, Dobroslav - Samokhin, Jevgen - Toušek, J. - Hulicius, Eduard - Pangrác, Jiří - Šimeček, Tomislav - Výborný, Zdeněk
Charge transport study and spectral response of GaSb/GaAs heterojunctions prepared by MOVPE.
Solar Energy Materials and Solar Cells. Roč. 76, - (2003), s. 135-145. ISSN 0927-0248. E-ISSN 1879-3398
R&D Projects: GA ČR GA102/99/0414
Institutional research plan: CEZ:AV0Z1010914
Keywords : thermophotovoltaics * GaSb/GaAs heterojunction * charge transport * band diagram
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.188, year: 2003

Heterojunctions p-GaSb/n-GaAs with p-layer prepared by the MOVPE were investigated. Measurement of I-V characteristics in the temperature range from 200 to 350K show that the charge transport can be described by a combination of emission and diffusion processes. The experimental curves were compared with theoretically calculated ones.
Permanent Link: http://hdl.handle.net/11104/0032168