0133940 - FZU-D 20020226 RIV US eng C - Conference Paper (international conference)
Macháč, P. - Jeníček, V. - Pangrác, Jiří - Hoffmann, K.
Microwave GaAs Schottky diode.
ASDAM'02. Hoes Lane: IEEE Copyrights Manager, 2002 - (Breza, J.; Donoval, D.), s. 125-128. ISBN 0-7803-7276-X.
[International Conference on Advanced Semiconductor Devices and Microsystems /4./. Smolenice (SK), 14.10.2002-16.10.2002]
R&D Projects: GA ČR GA102/99/0414
Institutional research plan: CEZ:AV0Z1010914
Keywords : GaAs * contacts * Shottky diode
Subject RIV: BM - Solid Matter Physics ; Magnetism

It was developed and realized the process of preparation of Shottky structuresusing the side-by-side technique with the limiting frequency of 13GHz.
Permanent Link: http://hdl.handle.net/11104/0031888