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Lasers with ë In As layers in GaAs
- 1.0133827 - FZU-D 20020006 RIV NL eng J - Journal Article
Oswald, Jiří - Hulicius, Eduard - Pangrác, Jiří - Melichar, Karel - Šimeček, Tomislav - Petříček, Otto - Kuldová, Karla - Hazdra, P. - Voves, J.
Lasers with ë In As layers in GaAs.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 88, - (2002), s. 312-316. ISSN 0921-5107. E-ISSN 1873-4944
R&D Projects: GA ČR GA102/99/0414
Institutional research plan: CEZ:AV0Z1010914
Keywords : semiconductor lasers * isovalent ë layers * InAs * GaAs * electroluminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
Electroluminescence of lasers with different number (1,3,5,7) of ë InAs layers in GaAs prepared by Low Pressure Metal-Organic Vapor Phase Epitaxy was investigated. Results show that by increasing the number of ë InAs layers and decreasing the distance between these layers it is possible to decrease the lasing emission energy below 1.15 eV.
Permanent Link: http://hdl.handle.net/11104/0031782
Number of the records: 1