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Photoluminescence properties of sol-gel derived SiO.sub.2./sub. layers doped with porous silicon
- 1.0133824 - FZU-D 20020003 RIV NL eng J - Journal Article
Švrček, Vladimír - Pelant, Ivan - Rehspringer, J. L. - Gilliot, P. - Ohlmann, D. - Crégut, O. - Hönerlage, B. - Chvojka, T. - Valenta, J. - Dian, J.
Photoluminescence properties of sol-gel derived SiO2 layers doped with porous silicon.
Materials Science & Engineering C-Materials for Biological Applications. Roč. 19, - (2002), s. 233-236. ISSN 0928-4931. E-ISSN 1873-0191
R&D Projects: GA AV ČR IAA1010809; GA AV ČR IAB2949101; GA AV ČR IAB1112901
Grant - others:GA UK(XC) 144/2000/B/FYZ
Institutional research plan: CEZ:AV0Z1010914
Keywords : nanocrystalline silicon * photoluminescence * porous silicon
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.734, year: 2002
The new material was fabricated using a low cost way by incorporating Si-nc into a sol-gel derived SiO2 matrix. The sol-gel layers exhibit bright red photoluminescence (PL) under UV lamp excitation at room temperature.
Permanent Link: http://hdl.handle.net/11104/0031779
Number of the records: 1