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A Raman study of GaAsN, GaInAsN layers on bevelled samples
- 1.0133759 - FZU-D 20020140 RIV NL eng J - Journal Article
Srnanek, R. - Vincze, A. - Kovac, J. - Gregora, Ivan - Mc Phail, D. S. - Gottschalsch, V.
A Raman study of GaAsN, GaInAsN layers on bevelled samples.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. 91-92, - (2002), s. 87-90. ISSN 0921-5107. E-ISSN 1873-4944.
[International Conference of Defects /9./. Rimini, 24.09.2001-28.09.2001]
Grant - others:GA-(SK) 1/7600/20; GA-(SK) 4/7643/20
Institutional research plan: CEZ:AV0Z1010914
Keywords : Raman spectroscopy * GaAsN * GaInAsN * bevelling
Subject RIV: BM - Solid Matter Physics ; Magnetism
Bevelled structures of strained and relaxed GaAsN and GaInAsN layers have been investigated by Raman spectroscopy. The ratio of TO/LO phonon intensities (ITO/ILO) along the bevelled structures was evaluated.
Permanent Link: http://hdl.handle.net/11104/0031718
Number of the records: 1