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Silicon-based-light-emitting materials: implanted SiO.sub.2./sub. films and wide bandgap a-Si:H
- 1.0133689 - FZU-D 20010489 RIV US eng C - Conference Paper (international conference)
Pelant, Ivan - Luterová, Kateřina - Fojtík, Petr - Rehspringer, J. L. - Müller, D. - Grob, J. J. - Dian, J. - Valenta, Jan - Tomasiunas, R. - Hönerlage, B.
Silicon-based-light-emitting materials: implanted SiO2 films and wide bandgap a-Si:H.
0-8194-4120-1. In: Optical Organic and Inorganic Materials. Washington: SPIE, 2001 - (Ašmontas, S.; Gradauskas, J.), s. 66-76. Proceedings of SPIE., 4415. ISSN 0277-786X.
[Optical Organic and Inorganic Materials. Vilnius (LT), 16.08.2000-19.08.2000]
R&D Projects: GA AV ČR IAB1112901; GA ČR GA202/98/0669
Grant - others:HTECH(XX) LG972051
Institutional research plan: CEZ:AV0Z1010914
Keywords : amorphous silicon * implanted SiO2 * silicon nanocrystals * photoluminescence * electroluminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
The paper reviews critically the results of investigation of hydrogenated amorphous silicon (a-Si:H) and Si.sup.+ - implanted SiO2 films from the point of view of light emission applications. Wide band gap a-Si:H with the energy gap ranging from 2.0 to 2.2 eV exhibits room temperature photoluminescence in the visible region.
Permanent Link: http://hdl.handle.net/11104/0031652
Number of the records: 1