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Electrostatic screening in integral quantum Hall regime

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    0133675 - FZU-D 20010475 RIV DE eng C - Conference Paper (international conference)
    Mareš, Jiří J. - Krištofik, Jozef - Hubík, Pavel
    Electrostatic screening in integral quantum Hall regime.
    3-540-41778-8. In: Proceedings of the 25th International Conference on the Physics of Semiconductors. Berlin: Springer, 2001 - (Miura, N.; Ando, T.), s. 1005-1006. Springer proceedings in physics., 87. ISSN 0930-8989.
    [International Conference on the Physics of Semiconductors /25./. Osaka (JP), 19.09.2000-22.09.2000]
    R&D Projects: GA AV ČR IAA1010806; GA AV ČR IAA1010807; GA ČR GA202/99/0410
    Institutional research plan: CEZ:AV0Z1010914
    Keywords : quantum well * quantum Hall effect * heterodimensinal junctions * magnetocapacitance measurement
    Subject RIV: BM - Solid Matter Physics ; Magnetism

    Results obtained by the electric field penetration method are analysed. In the integral quantum Hall effect regime a topological phase transition takes place which is due to the intrinsic disorder of dopants in the source layer in the vicinity of the quantum well.
    Permanent Link: http://hdl.handle.net/11104/0031638
     

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