0133635 - FZU-D 20010435 RIV LT eng J - Journal Article
Mikulskas, I. - Šulcas, R. - Vanagas, E. - Tomašiunas, R. - Luterová, Kateřina - Pelant, Ivan - Rehspringer, J. L. - Lévy, R.
Si⁺ and Ge⁺ ion implanted SiO₂ matices: photoluminescence peculiarities.
Lithuanian Journal of Physics. Roč. 41, 4-6 (2001), s. 399-403. ISSN 1392-1932.
[National Lithuanin Physics Conference /34./. Vilnius, 14.06.2001-16.06.2001]
R&D Projects: GA AV ČR IAA1010809; GA AV ČR IAB2949101
Grant - others:NATO(XX) PST.GLG.978100
Institutional research plan: CEZ:AV0Z1010914
Keywords : nanocrystallites * ion-implanted SiO₂ * photoluminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism

We have investigated light emission from defects and nanocrystallites embedded into porous SiO_{2 matrix, prepared by sol-gel routines, or into thermally grown SiO}2 films. The task of our investigation was to study a variety of ion-implanted SiO_{2 structures with respect to their luminescence properties.
Permanent Link: http://hdl.handle.net/11104/0031598
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