Number of the records: 1
Strained In.sub.x./sub.Ga.sub.1-x./sub.As/GaAs multiple quantum wells grown by MOVPE
- 1.0132883 - FZU-D 20000138 RIV CZ eng J - Journal Article
Hospodková, Alice - Hulicius, Eduard - Oswald, Jiří - Pangrác, Jiří - Melichar, Karel - Šimeček, Tomislav
Strained InxGa1-xAs/GaAs multiple quantum wells grown by MOVPE.
Czechoslovak Journal of Physics. Roč. 49, č. 5 (1999), s. 805-812. ISSN 0011-4626
Institutional research plan: CEZ:AV0Z1010914
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.328, year: 1999
Luminescence properties of strained InxGa1-xAs/GaAs multiple quantum wells of different thickness and In content, prepared by metal organic vapour phase epitaxy were studied.
Permanent Link: http://hdl.handle.net/11104/0000594
Number of the records: 1