0132425 - FZU-D 990375 RIV CN eng C - Conference Paper (international conference)
Hulicius, Eduard - Oswald, Jiří - Hospodková, Alice - Pangrác, Jiří - Melichar, Karel - Šimeček, Tomislav
Preparation and characterisation of A III B V semiconductor quantum-size structures by MOCVD technology.
The Second China-Czech Symposium on Advanced Material and Devices for Optoelectronics. National Natural Sciences Foundation of China, 1999 - (Yu, J.), s. 16-23
[China-Czech Symposium on Advanced Material and Devices for Optoelectronics /2./. Beijing (CN), 13.09.1999-14.09.1999]
R&D Projects: GA ČR GA202/99/1613; GA ČR GA102/99/0414; GA ČR GA202/98/0074; GA AV ČR IAA1010807
Institutional research plan: CEZ:AV0Z1010914
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0030451