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Fermi contour of the 2D electron layer at a GaAs/AlxGa1-xAs heterojunction subject to in-plane magnetic fields

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    0130989 - FZU-D 960344 RIV NL eng J - Journal Article
    Smrčka, Ludvík - Vašek, Petr - Koláček, Jan - Jungwirth, Tomáš - Cukr, Miroslav
    Fermi contour of the 2D electron layer at a GaAs/AlxGa1-xAs heterojunction subject to in-plane magnetic fields.
    Surface Science. 361-362, - (1996), s. 509-512. ISSN 0039-6028. E-ISSN 1879-2758.
    [International Conference on the Electronic Properties of Two Dimensional Systems /11./. Nottingham, 07.08.1995-11.08.1995]
    R&D Projects: GA AV ČR IAA110423; GA AV ČR IAA110414; GA ČR GA202/94/1278
    Grant - others:INT(US) 9106888
    Impact factor: 2.783, year: 1996
    Permanent Link: http://hdl.handle.net/11104/0029089
     

Number of the records: 1  

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