0105961 - URE-Y 20040121 RIV US eng C - Conference Paper (international conference)
Zavadil, Jiří - Žďánský, Karel - Procházková, Olga - Kozak, Halina
Characterization of InP epitaxial layers for use in radiation detection.
[Charakterizace epitaxních vrstev InP, vhodných pro detekci ionizujícího záření.]
ASDAM'2004. Proceedings of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems. Piscataway: IEEE, 2004 - (Osvald, J.; Haščík, Š.), s. 247-250. ISBN 0-7803-8535-7.
[Advanced Semiconductor Devices and Microsystems - ASDAM'04 /5./. Smolenice (SK), 17.10.2004-21.10.2004]
R&D Projects: GA ČR(CZ) GA102/03/0379; GA AV ČR(CZ) IBS2067354; GA AV ČR(CZ) KSK1010104
Keywords : semiconductors * photoluminescence * galvanomagnetic effects
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0013146