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In-plane magnetic field-dependent magnetoresistance of gated asymmetric double quantum wells
- 1.0100326 - FZU-D 20040261 RIV NL eng J - Journal Article
Krupko, Yuriy - Smrčka, Ludvík - Vašek, Petr - Svoboda, Pavel - Cukr, Miroslav - Jansen, L.
In-plane magnetic field-dependent magnetoresistance of gated asymmetric double quantum wells.
[Magnetorezistence dvojitých kvantových jam s hradlem v paralelním magnetickém poli.]
Physica E: Low-Dimensional Systems and Nanostructures. Roč. 22, - (2004), s. 44-47. ISSN 1386-9477. E-ISSN 1873-1759.
[International Conference on Electronic Properties of Two-Dimensional Systems /15./. Nara, 14.07.2003-18.07.2003]
R&D Projects: GA ČR GA202/01/0754
Institutional research plan: CEZ:AV0Z1010914
Keywords : double-layer two-dimensional electron system * magnetotransport * gate voltage
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.898, year: 2004
We have investigated experimentally the magnetoresistance of strongly asymmetric gated double wells
Experimentálně jsme zkoumali magnetorezistenci silně asymetrických dvojitých kvantových jam s hradlem
Permanent Link: http://hdl.handle.net/11104/0007829
Number of the records: 1