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Ordinary and extraordinary Coulomb blockade magnetoresistance in (Ga,Mn)As single electron transistor
- 1.0097659 - FZÚ 2008 RIV GB eng J - Journal Article
Wunderlich, J. - Jungwirth, Tomáš - Novák, Vít - Irvine, A.C. - Kaestner, B. - Shick, Alexander - Foxon, C. T. - Campion, R. P. - Williams, D.A. - Gallagher, B. L.
Ordinary and extraordinary Coulomb blockade magnetoresistance in (Ga,Mn)As single electron transistor.
[Ordinérní a extraordinérní magnetorezistence v režimu Coulombovské blokády v GaMnAs jednoelektonového transistoru.]
Solid State Communications. Roč. 144, - (2007), s. 536-541. ISSN 0038-1098. E-ISSN 1879-2766
R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/1519; GA MŠMT LC510; GA ČR GEFON/06/E001; GA ČR GEFON/06/E002
EU Projects: European Commission(XE) 015728 - NANOSPIN
Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520
Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.535, year: 2007
Experimental and theoretical study of magnetoresistance effects in the Coulomb blockade regime using a ferromagnetic (Ga, Mn)As single electron transistor.
Experimentální a teoretické studium magnetorezistence v režimu Coulombovské blokády v GaMnAs jednoelektronovém transistoru.
Permanent Link: http://hdl.handle.net/11104/0156753
Number of the records: 1