Number of the records: 1
Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface
- 1.0021373 - FZÚ 2006 US eng A - Abstract
Dubecký, F. - Zat´ko, B. - Ferrari, C. - Frigeri, P. - Hubík, Pavel - Krištofik, Jozef - Förster, A. - Kordoš, P.
Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface.
Symposium On Non-Stochiometric III-V Compounds /4./ - Abstract Book. California, 2002. s. 78-78.
[Symposium On Non-Stochiometric III-V Compounds /4./. 02.09.2002-04.09.2002, Asilomar Cafifornia]
Keywords : semi-insulating GaAs * LT-MBE GaAs * charge transport
Permanent Link: http://hdl.handle.net/11104/0110355
Number of the records: 1